III-V diluted magnetic semiconductor: Substitutional doping of Mn in InAs.
نویسندگان
چکیده
Local structures around Mn in In12xMnxAs films grown by molecular-beam epitaxy have been studied by using Mn K-edge extended x-ray-absorption fine-structure ~EXAFS! technique. Substitution of Mn atoms for the In sites is found in samples either grown at low substrate temperatures ~near 200 °C! or with a low Mn concentration ~about 1 at. %!. This result represents a significant extension of an earlier EXAFS study and serves as direct experimental evidence for III-V diluted magnetic semiconductors obtained by substitutional doping of Mn impurities in InAs.
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عنوان ژورنال:
- Physical review. B, Condensed matter
دوره 53 8 شماره
صفحات -
تاریخ انتشار 1996